2.2 Selection of Precursors and Synthesis Method

This chapter provides a simple room temperature chemical precursor solution preparation techniques for the fabrication of pyrochlore-free crystalline films and some of the representative properties of SrBi2Ta2O9 thin film are exhibited as an example. The detailed fabrication procedure of SrBi2Ta2O9-Bi3TaTiO9 thin films will be presented in next chapter. However, for the fabrication procedure of SrBi2Ta2O9 and SrBi2Ta2O9-Bi3TaTiO9 thin films are quite similar, most of detailed procedure is discussed in this chapter. A chemical precursor solution technique using carboxylate-alkoxide combination has been developed which provides pyrochlore free crystalline phase even at low annealing temperatures. The main features of the process are room temperature preparation, short preparation time, easy availability of precursors, stability, and compatibility with semiconductor-fabrication technology. A rapid fabrication process is desirable, since long processes are more expensive in terms of the use of the facilities and personnel. This process can be used for the fabrication of perovskites, layered perovskite, or tungsten bronze materials and their solid solutions. The same approach can also be used for doping these materials.